elektronische bauelemente SMS501DE 0.03a , 600v , r ds(on) 700 n-ch enhancement mode power mosfet 28-oct-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. sot - 23 rohs compliant product a suffix of -c specifies halogen free description the SMS501DE is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline green device available marking package information package mpq leader size sot-23 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 600 v gate-source voltage v gs 20 v t c =25c 0.03 a continuous drain current t c =100c i d 0.024 a pulsed drain current i dm 0.12 a t c =25c 0.5 total power dissipation derate above 25c p d 0.004 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient r ja 250 c / w maximum thermal resistance junction-case r jc 50 c / w top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. m in. max. ref. min. max. a 2.70 3.10 g 0.09 0.18 b 2.10 2.65 h 0.35 0.65 c 1.20 1.40 j 0.08 0.20 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.95 bsc. f 0.30 0.50 501de
elektronische bauelemente SMS501DE 0.03a , 600v , r ds(on) 700 n-ch enhancement mode power mosfet 28-oct-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 600 - - v v gs =5v, i d = 250 a drain-source leakage current i d(off) - - 0.1 a v gs =5v, v ds =600v gate-source leakage current i gss - - 100 na v gs = 20v gate-threshold voltage v gs(th) -2.7 - -1 v v ds =3v, i d =8 a drain-source leakage current i dss 12 - - ma v ds =25v, v gs =0 - 310 700 v gs =0v, i d =3ma static drain-source on-resistance r ds(on) - 330 700 v gs =10v, i d =16ma total gate charge 1.2 q g - 1.8 - gate-source charge 1.2 q gs - 0.75 - gate-drain change 1.2 q gd - 0.56 - nc i d =0.01a v ds =4000v v gs =5v turn-on delay time 1.2 t d(on) - 18 - rise time 1.2 t r - 90 - turn-off delay time 1.2 t d(off) - 93 - fall time 1.2 t f - 210 - ns v dd =300v i d =0.01a v gs =-5v v gs =7v r g =6 input capacitance c iss - 99 - output capacitance c oss - 9.1 - reverse transfer capacitance c rss - 5 - pf v gs =5v v ds =25v f =1.0mhz source-drain diode diode forward voltage v sd - - 1.2 v i s =16ma, v gs =5v continuous source current i s - - 0.03 a pulsed source current i sm - - 0.12 a integral reverse p-n junction diode in the mosfet reverse recovery time t rr - - 367 ns reverse recovery charge q rr - - 963 c i f =0.01a,v r =300v, dl f /dt=100a/ s notes: 1. pulse test: pulse width Q 300 s, duty cycle Q 2% 2. essentially independent of operating temperatur e.
elektronische bauelemente SMS501DE 0.03a , 600v , r ds(on) 700 n-ch enhancement mode power mosfet 28-oct-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SMS501DE 0.03a , 600v , r ds(on) 700 n-ch enhancement mode power mosfet 28-oct-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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